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Thin Bi films are interesting candidates for spintronic applications due to alarge spin-orbit splitting that, combined with the loss of inversion symmetryat the surface, results in a band structure that is not spin-degenerate. Inrecent years, applications for topological insulators based on Bi and Bi alloyshave as well attracted much attention. Here we present ARPES studies ofBi/InAs(100) interface. Bismuth deposition followed by annealing of the surfaceresults in the formation of one full Bi monolayer decorated by Bi-nanolines. Wefound that the building up of the interface does affect the electronicstructure of the substrate. As a consequence of weak interaction, bismuthstates are placed in the gaps of the electronic structure of InAs(100). Weobserve a strong resonance of the Bi electronic states close to the Fermilevel; its intensity depends on the photon energy and the photon polarization.These states show nearly no dispersion when measured perpendicular to thenanolines, confirming their one-dimensionality.

Strong Resonances of Quasi 1D Structures at the Bi/InAs(100) Surface