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Substrate engineering provides an opportunity to modulate the physicalproperties of quantum materials in thin film form. Here we report that TiSe$_2$thin films grown on TiO$_2$ have unexpectedly large electron doping thatsuppresses the charge density wave (CDW) order. This is dramatically differentfrom either bulk single crystal TiSe$_2$ or TiSe$_2$ thin films on graphene.The epitaxial TiSe$_2$ thin films can be prepared on TiO$_2$ via molecular beamepitaxy (MBE) in two ways: by conventional co-deposition using selenium andtitanium sources, and by evaporating only selenium on reconstructed TiO$_2$surfaces. Both growth methods yield atomically flat thin films with similarphysical properties. The electron doping and subsequent suppression of CDWorder can be explained by selenium vacancies in the TiSe$_2$ film, whichnaturally occur when TiO$_2$ substrates are used. This is due to the strongerinterfacial bonding that changes the ideal growth conditions. Our findingprovides a way to tune the chemical potential of chalcogenide thin films viasubstrate selection and engineering.

Suppression of Charge Density Wave by Substrate Induced Doping on TiSe$_2$/TiO$_2$ Heterostructure