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The solid state interdiffusion in refractory metals and single crystal Si arestudied in details by diffusion couple technique. The wide range of applicationand importance of silicides in various devices are the motivation for thesestudies. The refractory metals which are considered and compared in these M/Sisystems (M = metal) are group IVB elements Ti, Zr and Hf, group VB elements V,Nb and Ta, group VIB elements Cr, Mo and W. Out of these systems, the Ti, Zr,Hf, Ta and W M-Si systems have been studied in this thesis. The results of V,Nb and Mo systems, which were studied before in our group, are compared withthe result of present study and a systematic pattern in diffusion behavior isfound with increasing atomic number of the elements, group-wise in the periodictable. These studies help to understand the growth kinetics of the phasesformed, diffusion parameters, relative mobilities of the species and presenceand behavior of the different defects in the crystal structure. The differentdiffusion parameters calculated in present study are, parabolic growthconstants, integrated diffusion coefficients, activation energy for diffusion,ratio of tracer diffusivities and tracer diffusivity of the species

Interdiffusion study in group IVB, VB and VIB refractory metal-silicon systems