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Despite numerous studies on three-dimensional topological insulators (3DTIs), the controlled growth of high quality (bulk-insulating and high mobility)TIs remains a challenging subject. This study investigates the role of growthmethods on the synthesis of single crystal stoichiometric BiSbTeSe2 (BSTS).Three types of BSTS samples are prepared using three different methods, namelymelting growth (MG), Bridgman growth (BG) and two-step melting-Bridgman growth(MBG). Our results show that the crystal quality of the BSTS depend strongly onthe growth method. Crystal structure and composition analyses suggest a betterhomogeneity and highly-ordered crystal structure in BSTS grown by MBG method.This correlates well to sample electrical transport properties, where asubstantial improvement in surface mobility is observed in MBG BSTS devices.The enhancement in crystal quality and mobility allow the observation ofwell-developed quantum Hall effect at low magnetic field.

Enhancement in surface mobility and quantum transport of  Bi_(2-x)Sb_(x)Te_(3-y)Se_(y) topological insulator by controlling the crystal  growth conditions