English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

Hexagonal Boron Nitride (hBN) mono and multilayers are promising hosts forroom temperature single photon emitters (SPEs). In this work we explore highenergy (~ MeV) electron irradiation as a means to generate stable SPEs in hBN.We investigate four types of exfoliated hBN flakes - namely, high puritymultilayers, isotopically pure hBN, carbon rich hBN multilayers and monolayeredmaterial - and find that electron irradiation increases emitter concentrationsdramatically in all samples. Furthermore, the engineered emitters are locatedthroughout hBN flakes (not only at flake edges or grain boundaries), and do notrequire activation by high temperature annealing of the host material afterelectron exposure. Our results provide important insights into controlledformation of hBN SPEs and may aid in identification of their crystallographicorigin.

Effects of high energy electron irradiation on quantum emitters in hexagonal boron nitride