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In this paper, we present a large signal and switching analysis for theHeterojunction Bipolar Transistor Laser (TL) to reveal its optical andelectrical behavior under high current injection conditions. Utilizingappropriate models for carrier transport, nonlinear optical gain and opticalconfinement factor (OCF), we have simulated the large signal response of theHBTL in relatively low and high modulation frequencies. Our results predictthat for multiple quantum well structures at low frequencies there should notbe a difference in carrier density either the photon density. However, carrierconcentration can be differently distributed between subsequent wells in caseof a high speed yet large signal input. This leads to increased linewidthinstead as it depends on {\Delta}Nqw. We show the effect of differentstructural parameters on the switching behavior by performing a switchinganalysis of the Single Quantum Well (SQW) and Multiple Quantum Well (MQW)structures using computationally efficient numerical methods. A set of coupledrate equations is solved to investigate the large-signal and switching behaviorof MQW-HBTL. Finally, to have a comprehensive judgment about thisoptoelectronic device, we introduce a relative performance factor to takinginto account all the optoelectronic characteristics such as output power, accurrent gain, modulation bandwidth, and base threshold current as well asturn-on time in order to design a suitable TL for Opto-Electronic IntegratedCircuits (OEICs).

Large signal analysis of multiple quantum well transistor lasers: Investigation of imbalanced carrier and photon density distribution