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Udalov and Beloborodov in the recent papers [Phys. Rev. B 95, 134106 (2017);Phys. Rev. B 96, 125425 (2017)] report the strong influence of image forces onthe conductance of ferroelectric tunnel junctions. In particular, the authorsstate that there is enhancement of the electroresistance effect due topolarization hysteresis in symmetric tunnel junctions at nonzero bias. Thisconjecture seems to be a breakthrough --- the common knowledge is that theconsiderable effect, linear over voltage bias, takes place only in NONsymmetricjunctions. We show that the influence of image forces on the conductance offerroelectric tunnel junctions is highly overestimated due to neglecting thedifference between characteristic ferroelectric relaxation and electrontunneling times. We argue that notable enhancement of the electroresistanceeffect from image forces due to polarization hysteresis in symmetric tunneljunctions at nonzero bias might be observed only at anomalously slow electrontunneling through the barrier. The same applies to magnetic tunnel junctionswith a ferroelectric barrier also considered by Udalov et al: there is nosignificant increase of the magnetoelectric effect due to image forces fortypical electron tunneling times. Udalov and Beloborodov completely missed thedevelopment of image force theory since 1950's and they forgot that electronsmove much faster than atoms in condensed matter. We underline that taking intoaccount dynamical effects in charge tunneling can bring new insight on physicsof ferroelectric tunnel junctions.

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