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Optical grating technique, where optical gratings are generated via lightinference, has been widely used to measure charge carrier and phonon transportin semiconductors. In this paper, compared are three types of transient opticalgrating techniques: transient grating diffraction, transient gratingheterodyne, and grating imaging, by utilizing them to measure carrier diffusioncoefficient in a GaAs/AlAs superlattice. Theoretical models are constructed foreach technique to extract the carrier diffusion coefficient, and the resultsfrom all three techniques are consistent. Our main findings are: (1) thetransient transmission change obtained from transient grating heterodyne andgrating imaging techniques are identical, even these two techniques originatefrom different detection principles; and (2) By adopting detection oftransmission change (heterodyne amplification) instead of pure diffraction, thegrating imaging technique (transient grating heterodyne) has overwhelmingadvantage in signal intensity than the transient grating diffraction, with asignal intensity ratio of 315:1 (157:1).

Comparison between Grating Imaging and Transient Grating Techniques on Measuring Carrier Diffusion in Semiconductor