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We investigate the electron properties of the monolayer and bilayer silicenewhich is the honeycomb lattice consist of silicon atoms, including the opticalconductivity and charged impurity scattering, due to the quasipatricleDirac-like behaviors near the K-point of silicene. The spin, valley, sublatticedegrees of freedom are taken into consider in the multi-band tight-bindingmodel. In momentum space, the scattering matrix which connects the two bare(without interaction) Green's functions in the quasiparticle momentum transportprocess, could be momentum-independent for the single impuirity configuration,which is similar to the case with small Coulomb coupling in the low-energyDirac semimetallic system. While in the zero-frequency limit, or thefrequency-independent case in the strong Coulomb coupling regime, the staticpolarization can be obtained by the random-phase-approximation, and it'simportant for the determination of the screened Coulomb scattering by thecharge impurity. The antiferromagnetic order in the silicene isHubbard-U-dependent, unlike the square lattice which with the antiferromagneticground state, and provides the premise of the phase transition from thenonmagnetic semimetal phase to the insulator one. We found that in the absenceof electric field, the critical value of the phase transition from semimetal toinsulator is 9 eV for the clear monolayer silicene, and is 12 eV for the 2ndAA-stacked bilayer silicene or the dirty monolayer silicene whcih with impuritystrength 4 eV. While the behaviors of 1st AA-stacked bilayer silicene is foundsimilar to the monolayer one. The in-plane optical conductivity also shows thesame results.

Geometrical structure and the electron transport properties of monolayer  and bilayer silicene near the semimetal-insulator transition point in  tight-binding model