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The ability to pattern graphene at low temperatures in a scalable manner isone of the greatest challenges facing graphene industrial adoption today. Wedemonstrate a simple method for low-temperature gold-catalyzed etching ofgraphite with predictable characteristics using ambient air at $350-375^\circ$C. The naturally occurring water vapor in ambient air is necessary for thisreaction to occur. In addition, we characterize the etch characteristics as afunction of process parameters. Ar annealing is required to obtaincrystallographically straight etches, and $375^\circ$ C is required to obtainsingle-layer deep etching. We anticipate that this work can be adapted byfuture research to precisely control the shape of the etched areas, allowingfor the simple low-temperature creation of nanoscale graphite features, andultimately can be applied to single-layer graphene sheets for integrated devicefabrication.

On the Role of Water Vapor and Process Gasses in Low-Temperature Gold-Catalyzed Graphene Etching