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A next-generation memory device utilizing a three-dimensional nanowire systemrequires the reliable control of domain wall motion. In this letter, domainwalls are studied in cylindrical nanowires consisting of alternating segmentsof cobalt and nickel. The material interfaces acting as domain wall pinningsites, are utilized in combination with current pulses, to control the positionof the domain wall, which is monitored using magnetoresistance measurements.Magnetic force microscopy results further confirm the occurrence of currentassisted domain wall depinning. Data bits are therefore shifted along thenanowire by sequentially pinning and depinning a domain wall between successiveinterfaces, a requirement necessary for race-track type memory devices. Wedemonstrate that the direction, amplitude and duration of the applied currentpulses determine the propagation of the domain wall across pinning sites. Theseresults demonstrate a multi-bit cylindrical nanowire device, utilizing currentassisted data manipulation. The prospect of sequential pinning and depinning inthese nanowires allows the bit density to increase by several Tbs, depending onthe number of segments within these nanowires.

Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications