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Tensile strained bulk HgTe is a three-dimensional topological insulator.Because of the energetic position of its surface state Dirac points relative toits small bulk gap, the electronic properties of the relatively thin MBE-grownfilms used to study this material experimentally are quite sensitive to detailsof its electrostatic band-bending physics. We have used an 8-band $\mathbf{k}\cdot \mathbf{p}$ model to evaluate the gate voltage dependence of itsthin-film two-dimensional subbands and related thermodynamic and transportproperties in films with thicknesses between 30 and 70nm, accountingself-consistently for gate field screening by the topologically protectedsurface states and bulk state response. We comment on the effective dielectricconstant that is appropriate in calculations of this type, arguing for asmaller value $\varepsilon_r$ $\approx$ 6.5 than is commonly used. Comparingwith recent experiments, we find that our fully microscopic model of gate fieldscreening alters the interpretation of some observations that have been used tocharacterize strained HgTe thin films.

Electronic properties of thin films of tensile strained HgTe