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The development of color centers in diamond as the basis for emerging quantumtechnologies has been limited by the need for ion implantation to create theappropriate defects. We present a versatile method to dope diamond without ionimplantation, by synthesis of a doped amorphous carbon precursor andtransformation at high temperatures and high pressures. To explore thisbottom-up method for color center generation, we rationally createsilicon-vacancy defects in nanodiamond and investigate them for opticalpressure metrology. In addition, we show that this process can generate noblegas defects within diamond from the typically-inactive argon pressure medium,which may explain the hysteresis effects observed in other high pressureexperiments and the presence of noble gases in some meteoritic nanodiamonds.Our results illustrate a general method to produce color centers in diamond,and may enable the controlled generation of designer defects.

High pressure, high temperature molecular doping of nanodiamond