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Electrical transport in three dimensional topological insulators(TIs) occursthrough spin-momentum locked topological surface states that enclose aninsulating bulk. In the presence of a magnetic field, surface states getquantized into Landau levels giving rise to chiral edge states that arenaturally spin-polarized due to spin momentum locking. It has been proposedthat p-n junctions of TIs in the quantum Hall regime can manifest unique spindependent effects, apart from forming basic building blocks for highlyfunctional spintronic devices. Here, for the first time we studyelectrostatically defined n-p-n junctions of bulk insulating topologicalinsulator BiSbTe$_{1.25}$Se$_{1.75}$ in the quantum Hall regime. We reveal theremarkable quantization of longitudinal resistance into plateaus at 3/2 and 2/3h/e$^2$, apart from several partially developed fractional plateaus.Theoretical modeling combining the electrostatics of the dual gated TI n-p-njunction with Landauer Buttiker formalism for transport through a network ofchiral edge states explains our experimental data, while revealing remarkabledifferences from p-n junctions of graphene and two-dimensional electron gassystems. Our work not only opens up a route towards exotic spintronic devicesbut also provides a test bed for investigating the unique signatures of quantumHall effects in topological insulators.

Quantized transport in topological insulator n-p-n junctions