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We report on the demonstration of MoS2/GaN UV-visible photodetectors withhigh spectral responsivity both in UV and in visible regions as well as theobservation of MoS2 band-edge in spectral responsivity. Multi-layer MoS2 flakesof thickness ~ 200 nm were exfoliated on epitaxial GaN-on-sapphire, followed byfabrication of detectors in a lateral Metal-Semiconductor-Metal (MSM) geometrywith Ni/Au contacts which were insulated from the GaN layer underneath by Al2O3dielectric. Devices exhibited distinct steps in spectral responsivity at 365 nmand at ~ 685 nm with a corresponding photo-to-dark current ratio of ~4000 and ~100 respectively. Responsivity of 0.1 A/W (at 10 V) was measured at 365 nmcorresponding to GaN band edge, while the second band edge at ~ 685 nm ischaracterized by a spectral responsivity (SR) of ~ 33 A/W when accounted forthe flake size, corresponding to the direct band gap at K point of multi-layerMoS2.

Multi-layer MoS2/GaN UV-Visible photodetector with observation of MoS2 band edge in spectral responsivity