English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

Atomic intercalation in two dimensional (2D) layered materials can engineerthe electronic structure at the atomic scale, bringing out tunable physical andchemical properties which are quite distinct in comparison with pristine one.Among them, electron-doped engineering induced by intercalation is an efficientroute to modulate electronic states in 2D layers. Herein, we demonstrate asemiconducting to the metallic phase transition in zirconium diselenide (ZrSe2)single crystal via controllable incorporation of copper (Cu) atoms. Combinedwith first-principles density functional theory (DFT) calculations, our angleresolved photoemission spectroscopy (ARPES) characterizations clearly revealedthe emergence of conduction band dispersion at M/L point of Brillouin zone dueto Cu-induced electron doping in ZrSe2 interlayers. Moreover, the field-effecttransistor (FET) fabricated on ZrSe2 displayed a n-type semiconductingtransport behavior, while the Cu-intercalated ZrSe2 posed linear Ids vs Vdscurves with metallic character shows n-type doping. The atomic intercalationapproach has high potential for realizing transparent electron-doping systemsfor many specific 2D-based nano-electronics.

Electron-Doping Induced Semiconductor to Metal Transitions in ZrSe2 Layers via Copper Atomic Intercalation