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A comprehensive current-voltage (I-V) characterization is performed for threedifferent Schottky contacts; Pt, Ni and Ti, to unintentionally doped (UID)\{beta}-(Al0.19Ga0.81)2O3 grown by molecular beam epitaxy (MBE) on\{beta}-Ga2O3 for temperatures ranging between 25C -300C. Reciprocal spacemapping shows the (Al0.19Ga0.81)2O3 films are strained and lattice matched tothe substrate. Schottky Barrier Height (SBH), ideality factor (n), and seriesresistance (Rs) are extracted from the I-V characteristics for the three typesof metals and temperatures. Room temperature capacitance-voltage (C-V)measurements revealed fully depleted \{beta}-(Al0.19Ga0.81)2O3 layer. Extractedroom temperature SBHs after zero field correction for Pt, Ni and Ti were 2.39eV, 2.21 eV, and 1.22 eV respectively. Variation of SBHs with metal clearlyindicates the dependence on work function.

Pt, Ni and Ti Schottky barrier contacts to \{beta}-(Al0.19Ga0.81)2O3 grown by Molecular Beam Epitaxy on Sn doped \{beta}-Ga2O3 substrate