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A nanostructured trigonal SnSe2 was produced by mechanical alloying, and theeffect of high-pressures up to 25.8 GPa on it was investigated. The literaturereports refined structural data for SnS2 for pressures up to 20 GPa. These datawere used as input data in a crystallographic software to calculate the shellstructures around the Sn, Se, and S atoms placed at the origin. The shellstructures were used to simulate the partial and total structure factors Sij(K)and S(K), and by Fourier transformation the partial and total pairsdistribution functions Gij(R) and G(R) were obtained. The effect ofhigh-pressure on the SnSe2 and SnS2 structures were followed by observing thechanges in the Gij(R) functions. Also, the effect of high-pressure on thesmallest angle Sn-X (X=Se,S)-Sn, intralayer distance Sn-X (X=Se,S), andinterlayers distance X-X (X=Se,S) was studied. The interlayers distance X-X(X=Se,S) changes faster than the intralayer distance Sn-X (X=Se,S). Anenhancement of the average power factor at 20 GPa and 800 K for SnS2 wasreported. Using the interlayers distance S-S and intralayer distance Sn-S, itwas evidenced that the enhancement of average power factor may be associatedwith the changes of the interlayers distance S-S that is faster than that ofthe intralayer distance Sn-S.

The use of the Rietveld method and pairs distribution function analysis to study the pressure dependence of the trigonal SnSe2 and SnS2 structure