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A new approach to increase the downsize scalability of perpendicular STT-MRAMis presented. It consists in significantly increasing the thickness of thestorage layer in out-of-plane magnetized tunnel junctions (pMTJ) as compared toconventional pMTJ in order to induce a perpendicular shape anisotropy (PSA) inthis layer. This PSA is obtained by depositing a thick ferromagnetic (FM) layeron top of an MgO/FeCoB based magnetic tunnel junction (MTJ) so that thethickness of the storage layer becomes of the order or larger than the diameterof the MTJ pillar. In contrast to conventional spin transfer torque magneticrandom access memory (STT-MRAM) wherein the demagnetizing energy opposes theinterfacial perpendicular magnetic anisotropy (iPMA), in these novel memorycells, both PSA and iPMA contributions favor out-of-plane orientation of thestorage layer magnetization. Using thicker storage layers in these PSA-STT-MRAMhas several advantages. Thanks to the PSA, very high and easily tunable thermalstability factors can be achieved, even down to sub-10 nm diameters. Moreover,low damping material can be used for the thick FM material thus leading to areduction of the write current. The paper describes this new PSA-STT-MRAMconcept, practical realization of such memory arrays, magnetic characterizationdemonstrating thermal stability factor above 200 for MTJs as small as 8nm indiameter and possibility to maintain thermal stability factor above 60 down to4nm diameter.

Highly thermally stable sub-20nm magnetic random-access memory based on perpendicular shape anisotropy