English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

Large scale digital computing almost exclusively relies on the von-Neumannarchitecture which comprises of separate units for storage and computations.The energy expensive transfer of data from the memory units to the computingcores results in the well-known von-Neumann bottleneck. Various approachesaimed towards bypassing the von-Neumann bottleneck are being extensivelyexplored in the literature. Emerging non-volatile memristive technologies havebeen shown to be very efficient in computing analog dot products in an in-situfashion. The memristive analog computation of the dot product results in muchfaster operation as opposed to digital vector in-memory bit-wise Booleancomputations. However, challenges with respect to large scale manufacturingcoupled with the limited endurance of memristors have hindered rapidcommercialization of memristive based computing solutions. In this work, weshow that the standard 8 transistor (8T) digital SRAM array can be configuredas an analog-like in-memory multi-bit dot product engine. By applyingappropriate analog voltages to the read-ports of the 8T SRAM array, and sensingthe output current, an approximate analog-digital dot-product engine can beimplemented. We present two different configurations for enabling multi-bit dotproduct computations in the 8T SRAM cell array, without modifying the standardbit-cell structure. Since our proposal preserves the standard 8T-SRAM arraystructure, it can be used as a storage element with standard read-writeinstructions, and also as an on-demand analog-like dot product accelerator.

8T SRAM Cell as a Multi-bit Dot Product Engine for Beyond von-Neumann Computing