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The generalized tight-binding model has been developed to thoroughly explorethe essential electronic and optical properties of AB-bt bilayer silicene. Theyare greatly diversified by the buckled structure, stacking configuration,intralayer and interlayer hopping integrals, spin-orbital couplings; electricand magnetic fields (${E_z\hat z}$ $\&$ ${B_z\hat z}$). There exist the linear,parabolic and constant-energy-loop dispersions, multi-valley band structure andsemiconductor-metal transition as $E_z$ varies. The $E_z$-dependent magneticquantization exhibits the rich and unique Landau Levels (LLs) andmagneto-optical spectra. The LLs have the lower degeneracy, valley-createdlocalization centers, unusual distributions of quantum numbers, well-behavedand abnormal energy spectra in $B_z$-dependences, and the absence ofanti-crossing behavior. A lot of pronounced magneto-absorption peaks occur at avery narrow frequency range, being attributed to diverse excitation categories.They have no specific selection rules except that the Dirac-cone bandstructures are driven by the critical electric fields. The optical gaps arereduced by $E_z$, but enhanced by $B_z$, in which the threshold channel mightdramatically change in the formed case. The above-mentioned characteristics arein sharp contrast with those of layered graphenes.

Geometry- and field-diversified electronic and optical properties in bilayer silicene