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Beta-phase Ga2O3 has emerged as a promising candidate for a wide range ofdevice applications, including power electronic devices, radio-frequencydevices and solar-blind photodetectors. The wide bandgap energy and thepredicted high breakdown field, together with the availability of low-costnative substrates, make \b{eta}-Ga2O3 a promising material compared to otherconventional wide bandgap materials, such as GaN and SiC. Alloying of Al with\b{eta}-Ga2O3 could enable even larger band gap materials, and provide moreflexibility for electronic and optoelectronic device design. In this work, wedemonstrate a high mobility two-dimensional electron gas (2DEG) formed at the\b{eta}-(AlxGa1-x)2O3/Ga2O3 interface through modulation doping. Shubnikov-deHaas oscillation was observed for the first time in the modulation-doped\b{eta}-(AlxGa1-x)2O3/Ga2O3 structure, indicating a high-quality channel formedat the heterojunction interface. The formation of the 2DEG channel was furtherconfirmed by a weak temperature-dependence of the carrier density, and the peaklow temperature mobility was found to be 2790 cm2/Vs, which is significantlyhigher than can be achieved in bulk-doped \b{eta}-Ga2O3. The demonstratedmodulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 structure lays the foundation forfuture exploration of quantum physical phenomena as well as new semiconductordevice technologies based on the \b{eta}-Ga2O3 material system.

High Mobility 2DEG in modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 heterostructures