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Graphene is one of the most promising 2D materials for various applicationsdue to its unique electronic properties and high thermal stability. In previousstudies, it was shown that when graphene is deposited onto some transitionmetal substrates, small molecules, such as O$_2$, intercalate between thegraphene and the substrate and react to partially etch the graphene film whenheated to desorb the intercalates. Here, carbon vacancy defects areintentionally formed on Gr/Ru(0001) and their effect on the intercalation ofoxygen and etching of the graphene layer are investigated. 50 eV Ar$^+$sputtering with a low fluence is used to create isolated single vacancy defectsin the graphene overlayer and helium low energy ion scattering (LEIS) isemployed for surface analysis. It is found that the defects both ease theintercalation of the oxygen molecules and improve the etching efficiency of thegraphene during annealing.

The role of defects in the etching of graphene by intercalated oxygen