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Complex electron-microscopic, energy-dispersed and wide-temperature opticalabsorption and photoluminescence (PL) investigations are carried out intoBridgeman-grown layered In2Se3 crystals. It is shown that In2Se3 crystals as awhole have a homogeneous concentration of In and Se atoms, corresponding withIn2Se3 stoichiometry. Nevertheless, In2Se3 crystals contain a significantamount of dislocations, on which nano-sized interspersions of crystal phases ofpure InSe, In6Se7 and monoclinic red Se settle down. Optical wide-temperatureinvestigations of In2Se3 allow us to do the following: establish the width ofthe band-gap, the exciton binding energy; determine the frequency of ahalf-layer A-phonon, which takes part in electron (exciton)-phonon interaction;and to evaluate the effective masses of carriers and the dielectricpermeability. Finally, blue shift of the band-gap and character of the electron(exciton)-phonon interaction of nano-sized 3D InSe crystals confined in anIn2Se3 crystal matrix; influence of an InSe nanocrystal radius and of anensemble of 3D InSe nanocrystals with different radii for an increase of theexciton emission/absorption half-width line with temperature and radii of InSenanocrystals are discussed.

Characterization, optical properties and electron(exciton)-phonon interaction in bulk In2Se3 crystals and InSe nanocrystals in In2nSe3 confinement