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Stresses caused by thermal expansion coefficients mismatch of anodicallybonded glass and silicon samples are studied. An analytical model to determinegraphically the optimum bonding temperature is presented. It is essentially amodel for thin-film stress but uses integration of the linear coefficient ofthermal expansion difference between the bonding temperature and the workingtemperature. Recommendations for choosing the bonding temperature of silicon totwo brands of glass (Corning 7740 and LK5) are made. Keywords: anodic bonding,field assisted bonding, thermal expansion, stress.

Coefficient of Thermal Expansion Balancing for Field Assisted Bonding of Silicon to Glass