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In this paper, the localization of open metal contact for 90nm node SOC isreported based on Electron Beam Absorbed Current (EBAC) technique and scandiagnosis for the first time. According to the detected excess carbon, siliconand oxygen signals obtained from X-ray energy dispersive spectroscopy (EDX),the failure was deemed to be caused by the incomplete removal of silicatephotoresist polymer formed during the O2 plasma dry clean before copperplating. Based on this, we proposed to replace the dry clean with diluted HFclean prior to the copper plating, which can significantly remove the silicatepolymers and increase the yield.

Root Cause Analysis and Correction of Single Metal Contact Open-Induced Scan Chain Failure in 90nm node VLSI