English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Free-standing nanoribbons of InAs quantum membranes (QMs) transferred onto a(Si/Mo) multilayer mirror substrate are characterized by hard x-rayphotoemission spectroscopy (HXPS), and by standing-wave HXPS (SW-HXPS).Information on the chemical composition and on the chemical states of theelements within the nanoribbons was obtained by HXPS and on the quantitativedepth profiles by SW-HXPS. By comparing the experimental SW-HXPS rocking curvesto x-ray optical calculations, the chemical depth profile of the InAs(QM) andits interfaces were quantitatively derived with angstrom precision. Wedetermined that: i) the exposure to air induced the formation of an InAsO$_4$layer on top of the stoichiometric InAs(QM); ii) the top interface between theair-side InAsO$_4$ and the InAs(QM) is not sharp, indicating thatinterdiffusion occurs between these two layers; iii) the bottom interfacebetween the InAs(QM) and the native oxide SiO$_2$ on top of the (Si/Mo)substrate is abrupt. In addition, the valence band offset (VBO) between theInAs(QM) and the SiO$_2$/(Si/Mo) substrate was determined by HXPS. The value of$VBO = 0.2 \pm 0.04$ eV is in good agreement with literature results obtainedby electrical characterization, giving a clear indication of the formation of awell-defined and abrupt InAs/SiO$_2$ heterojunction. We have demonstrated thatHXPS and SW-HXPS are non-destructive, powerful methods for characterizinginterfaces and for providing chemical depth profiles of nanostructures, quantummembranes, and 2D layered materials.

Characterization of free standing InAs quantum membranes by standing wave hard x-ray photoemission spectroscopy