English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The effect of film morphology on its surface chemistry and band structure hasbeen analyzed for gallium nitride epitaxial films grown by molecular beamepitaxy. The film morphology has been studied using scanning electronmicroscopy and atomic force microscopy, and the bandstructure, defect andemission properties have been studied by X ray photoelectron spectroscopy andcathodoluminescence spectroscopy. It was found that the highly porous GaNnanowall network shows the highest relative conductivity and does not havedefect related luminescence. The flatter films were more resistive and showedyellow luminescence, due to Ga vacancies. GaN nanowall network exhibited aFermi level pinning at (1.8 $\pm$ 0.2) eV above valence band maximum,suggesting the presence of a Ga adlayer on the surface of GaN nanowall network.Ar ion sputtering was found to preferentially sputter N atoms leading tosurface metallization.

Morphology dependent surface properties of nanostructured GaN films grown by molecular beam epitaxy