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Semiconductor lasers capable of generating a vortex beam with a specificorbital angular momentum (OAM) order are highly attractive for applicationsranging from nanoparticle manipulation, imaging and microscopy to fibre andquantum communications. In this work, an electrically pumped OAM laseroperating at telecom wavelengths is fabricated by monolithically integrating anoptical vortex emitter with a distributed feedback (DFB) laser on the sameInGaAsP/InP epitaxial wafer. A single-step dry etching process is adopted tocomplete the OAM emitter, equipped with specially designed top gratings. Thevortex beam emitted by the integrated laser is captured, and its OAM modepurity characterized. The electrically pumped OAM laser eliminates the externallaser required by silicon- or silicon-on-insulator (SOI)-based OAM emitters,thus demonstrating great potential for applications in communication systemsand quantum domain.

Electrically Pumped Orbital Angular Momentum (OAM) Laser at Telecom Wavelengths