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Although, poly(dimethylsiloxane) (PDMS) is a widely used material in numerousapplications, such as micro- or nanofabrication, the method of its selectiveetching has not been known up to now. In this work authors present two methodsof etching the pure, additive-free and cured PDMS as a positive resistmaterial.  To achieve the chemical modification of the polymer necessary for selectiveetching, energetic ions were used. We created 7 um and 45 um thick PDMS layersand patterned them by a focused proton microbeam with various, relatively largefluences. In this paper authors demonstrate that 30 wt% Potassium Hydroxide(KOH) or 30 wt% sodium hydroxide (NaOH) at 70 oC temperature etch protonirradiated PDMS selectively, and remove the chemically sufficiently modifiedareas. In case of KOH development, the maximum etching rate was approximately3.5 um/minute and it occurs at about 7.5*10^15 ion*cm-2. In case of NaOHetching the maximum etching rate is slightly lower, 1.75 um/minute and can befound at the slightly higher fluence of 8.75*10^15 ion*cm-2.  These results are of high importance since up to this time it has not beenknown how to develop the additive-free, cross-linked poly(dimethylsiloxane) inlithography as a positive tone resist material.

Selective etching of PDMS: etching as positive resist