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Strain is commonly used in metal-oxide-semiconductor technologies to booston-state performance. This booster has been in production for at least adecade. Despite this, a systematic study of the impact of strain on off-stateleakage current has been lacking. In this work we use experimental data andab-initio calculations to refine existing models to account for the impact ofstrain on band-to-band tunnelling and trap-assisted tunnelling in silicon. Weobserve that the strain may dramatically increase the leakage current,depending on the type of tunnelling involved. For band-to-band andtrap-assisted tunnelling, low uniaxial strains of 0.1% (or 180 MPa) canincrease the leakage current by 60% and 10% compared to the unstrained case,respectively. Using our models, we predict that compressive strain on the orderof 1% (or 2 GPa) can increase the leakage current by 150 times. Conversely,tensile strain may diminish or at most double the leakage current in allobserved cases. Though detrimental in conventional inversion-mode MOSFETs,these processes may be used to boost the performance of Tunnel Field EffectTransistors, where on-state current is defined by band-to-band tunnelling.

Strain-induced effects on band-to-band tunnelling and trap-assisted tunnelling in Si examined by experiment and theory