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We report the synthesis of polycrystalline (poly)-SiGe alloy thin filmsthrough solid state reaction of Si/Ge multilayer thin films on Si and glasssubstrates at low temperature of 500 {\deg}C. The pristine thin film wasdeposited using electron beam evaporation with optimized in-situ substrateheating. Our results show the co-existence of amorphous Si (a-Si) phase alongwith the poly-SiGe phase in the pristine thin film. The a-Si phase was found tosubsume into the SiGe phase upon post deposition annealing in the temperaturerange from 600 to 800 {\deg}C. Additionally, dual energy band gaps could beobserved in the optical properties of the annealed poly-SiGe thin films. Thestoichiometric evolution of the pristine thin film and its subsequent effect onthe band gap upon annealing are discussed on the basis of diffusioncharacteristics of Si in poly-SiGe.

In-situ formation of SiGe alloy by electron beam evaporation and the effect of post deposition annealing on the energy band gap