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V-telluride superlattice thin films have shown promising performance foron-chip cooling devices. Recent experimental studies have indicated that deviceperformance is limited by the metal/semiconductor electrical contacts. Onechallenge in realizing a low resistivity contacts is the absence of fundamentalknowledge of the physical and chemical properties of interfaces between metaland V-telluride materials. Here we present a combination of experimental andtheoretical efforts to understand, design and harness low resistivity contactsto V-tellurides. Ab initio calculations are used to explore the effects ofinterfacial structure and chemical compositions on the electrical contacts, andan ab initio based macroscopic model is employed to predict the fundamentallimit of contact resistivity as a function of both carrier concentration andtemperature. Under the guidance of theoretical studies, we develop anexperimental approach to fabricate low resistivity metal contacts toV-telluride thin film superlattices, achieving a 100-fold reduction compared toprevious work. Interfacial characterization and analysis using both scanningtransmission electron microscopy and energy-dispersive x-ray spectroscopy showthe unusual interfacial morphology and the potential for further improvement incontact resistivity. Finally, we harness the improved contacts to realize animproved high-performance thermoelectric cooling module.

High Efficiency Thin Film Superlattice Thermoelectric Cooler Modules Enabled by Low Resistivity Contacts