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Voltage modulation of yttrium iron garnet (YIG) with compactness, high speedresponse, energy efficiency and both practical/theoretical siginificances canbe widely applied to various YIG based spintronics such as spin Hall, spinpumping, spin Seeback effects. Here we initial an ionic modulation ofinterfacial magnetism process on YIG/Pt bilayer heterostructures, where the Ptcapping would influence the ferromagnetic (FMR) field position significantly,and realize a significant magnetism enhancement in bilayer system. A largevoltage induced FMR field shifts of 690 Oe has been achieved in YIG (13 nm)/Pt(3 nm) multilayer heterostructures under a small voltage bias of 4.5 V. Theremarkable ME tunability comes from voltage induced extra FM ordering in Ptmetal layer near the Pt/YIG interface. The first-principle theoreticalsimulation reveal that the electrostatic doping induced Pt5+ ions have strongmagnetic ordering due to uncompensated d orbit electrons. The large voltagecontrol of FMR change pave a foundation towards novel voltage tunable YIG basedspintronics.

Ionic Modulation of Interfacial Magnetism through Electrostatic Doping in Pt/YIG bilayer heterostructure