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Understanding the energy transport by charge carriers and phonons intwo-dimensional (2D) van der Waals heterostructures is essential for thedevelopment of future energy-efficient 2D nanoelectronics. Here, we performedin situ spatially resolved Raman thermometry on an electrically biased graphenechannel and its hBN substrate to study the energy dissipation mechanism ingraphene/hBN heterostructures. By comparing the temperature profile along thebiased graphene channel with that along the hBN substrate, we found that thethermal boundary resistance between the graphene and hBN was in the range of(1-2) x 10^(-7) m^(2) KW^(-1) from ~100 C to the onset of graphene break-downat ~600 C in air. Consideration of an electro-thermal transport model togetherwith the Raman thermometry conducted in air showed that local doping occurredunder a strong electric field played a crucial role in the energy dissipationof the graphene/hBN device up to T ~ 600 C.

Energy dissipation mechanism revealed by spatially resolved Raman thermometry of graphene/hexagonal boron nitride heterostructure devices