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The quantum mechanical tunnelling process conserves the quantum properties ofthe particle considered. As applied to solid-state tunnelling (SST), thisphysical law was verified, within the field of spintronics, regarding theelectron spin in early experiments across Ge tunnel barriers, and in the 90sacross Al2O3 barriers. The conservation of the quantum parameter of orbitaloccupancy, as grouped into electronic symmetries, was observed in the '00sacross MgO barriers, followed by SrTiO3 (STO). Barrier defects, such as oxygenvacancies, partly conserve this electronic symmetry. In the solid-state, anadditional subtlety is the sign of the charge carrier: are holes or electronsinvolved in transport? We demonstrate that SST across MgO magnetic tunneljunctions (MTJs) with a large resistance-area (RA) product involves holes byexamining how shifting the MTJ's Fermi level alters the ensuing barrier heightsdefined by the barrier's oxygen vacancies. In the process, we consolidate thedescription of tunnel barrier heights induced by specific oxygen-vacancyinduced localized states. Our work opens prospects to understand the concurrentobservation of high TMR and spin transfer torque across MgO-based nanopillars.

Hole transport across MgO-based magnetic tunnel junctions with high resistance-area product due to oxygen vacancies