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Ferroelectric photovoltaics (FPVs) have drawn much attention owing to theirhigh stability, environmental safety, anomalously high photovoltages, coupledwith reversibly switchable photovoltaic responses. However, FPVs suffer fromextremely low photocurrents, which is primarily due to their wide band gaps.Here, we present a new class of FPVs by demonstrating switchable ferroelectricphotovoltaic effects using hexagonal ferrite (h-RFeO3) thin films having narrowband gaps of ~1.2 eV, where R denotes rare-earth ions. FPVs with narrow bandgaps suggests their potential applicability as photovoltaic and optoelectronicdevices. The h-RFeO3 films further exhibit reasonably large ferroelectricpolarizations, which possibly reduces a rapid recombination rate of thephoto-generated electron-hole pairs. The power conversion efficiency (PCE) ofh-RFeO3 thin-film devices is sensitive on the magnitude of polarization. In thecase of h-TmFeO3 (h-TFO) thin film, the measured PCE is twice as large as thatof the BiFeO3 thin film, a prototypic FPV. We have further shown that theswitchable photovoltaic effect dominates over the unswitchable internal fieldeffect arising from the net built-in potential. This work thus demonstrates anew class of FPVs towards high-efficiency solar cell and optoelectronicapplications.

Switchable Ferroelectric Photovoltaic Effects in Epitaxial Thin Films of h-RFeO3 having Narrow Optical Band Gaps