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In this paper, we investigated a gate driver using a GaN HEMT push-pullconfiguration for the high-frequency hard switching of a SiC power MOSFET. Lowon-resistance and low input capacitance of GaN HEMTs are suitable for ahigh-frequency gate driver from the logic level, and robustness of SiC MOSFETwith high avalanche capability is suitable for a valve transistor in powerconverters. Our proposed gate driver consists of digital isolators,complementary Si MOSFETs, and GaN HEMTs. The GaN HEMT push-pull stage has ahigh driving capability owing to its superior switching characteristics, andcomplementary Si MOSFETs can enhance the control signal from the digitalisolator. We investigated limiting factors of the switching frequency of theproposed gate driver by focusing on each circuit component and proposed animproved driving configuration for the gate driver. As a result, 20-MHz hardswitching of a SiC MOSFET was achieved using the improved gate driver with GaNHEMTs.

High-Speed Gate Driver Using GaN HEMTs for 20-MHz Hard Switching of SiC MOSFETs