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In this paper, we proposed an experimental implementation of quantum randomnumber generator(QRNG) with inherent randomness of quantum tunneling effect ofelectrons. We exploited InGaAs/InP diodes, whose valance band and conductionband shared a quasi-constant energy barrier. We applied a bias voltage on theInGaAs/InP avalanche diode, which made the diode works under Geiger mode, andtriggered the tunneling events with a periodic pulse. Finally, after datacollection and post-processing, our quantum random number generation ratereached 8Mb/s, and final data was verified by NIST test and Diehard test. Ourexperiment is characterized as an innovative low-cost, photonic source free,integratable or even chip-achievable method in quantum random numbergeneration.

Quantum random number generator based on quantum tunneling effect