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A simple yet precise optical technique for measuring the ambipolar carriermobility in semiconductors is presented. Using tightly focused Gaussian laserbeams in a photo-reflectance system, the modulated reflectance signal ismeasured as a function of the Z (longitudinal) displacement of the sample fromfocus. The modulated component of the reflected probe beam is a Gaussian beamwith its profile determined by the focal parameters and the complex diffusionlength. The reflected probe beam is collected and input to the detector,thereby integrating over the radial profile of the beam. This results inanalytic expressions for the Z dependence of the signal in terms of diffusionlength and recombination lifetime. Best fit values for the diffusion length andrecombination lifetime are obtained via an iterative fitting procedure. Theoutput diffusion lengths and recombination lifetimes and their estimateduncertainties are combined according to the Einstein relation to yield themobility and its uncertainty.

Precise Optical Measurement of Carrier Mobilities Using Z-scanning Laser Photoreflectance