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An efficient silicon based light source presents an unreached goal in thefield of photonics, due to Silicons indirect electronic band structurepreventing direct carrier recombination and subsequent photon emission. Here weutilize inelastically tunneling electrons to demonstrate an electrically drivenlight emitting silicon based tunnel junction operating at room temperature. Weshow that such a junction is a source for plasmons driven by the electricaltunnel current. We find that the emission spectrum is not given by the quantumcondition where the emission frequency would be proportional to the appliedvoltage, but the spectrum is determined by the spectral overlap between theenergy dependent tunnel current and the modal dispersion of the plasmon.Experimentally we find the highest light outcoupling efficiency correspondingto the skin depth of the metallic contact of this metal insulator semiconductorjunction. Distinct from LEDs, the temporal response of this tunnel source isnot governed by nanosecond carrier lifetimes known to semiconductors, butrather by the tunnel event itself and Heisenbergs uncertainty principle.

Electrical-driven Plasmon Source on Silicon based on Quantum Tunneling