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Tailoring and enhancing the interaction between light and matter is of greatimportance for both fundamental researches and future photonic andoptoelectronic applications. Due to their high exciton oscillator strength andlarge exciton binding energy, two-dimensional atomic semiconducting transitionmetal dichalcogenides have recently emerged as an excellent platform for thestrong photon-exciton interaction by integrating with optically resonantcavities. Here, we propose an all-semiconductor system composed of individualsilicon nanospheres and monolayer WS2 and investigate the resonance couplingbetween these two constituents. By coating the silicon nanospheres withmonolayer WS2, we demonstrate the strong resonance coupling between themagnetic dipole mode and A-exciton, evidenced by an anticrossing behavior inthe scattering energy diagram with a Rabi splitting of 77 meV. Compared withthe plasmonic analogues, the resonance coupling in all-semiconductorheterostructure is much stronger and less sensitive to the spacing between thesilicon nanosphere core and WS2 shell. When the silicon nanospheres are placedonto the WS2 monolayer with a point contact, resonance coupling manifested bythe quenching dips in the scattering spectra can also be observed at ambientconditions, which involves only a few excitons. Finally, resonance coupling inthe all-semiconductor heterostructure can be active controlled by temperaturescanning. Our findings suggest that this all-semiconductor heterostructure canbe exploited for future on-chip nanophotonics associated with stronglight-matter interactions.

Resonant Photon-Exciton Coupling in All-Semiconductor Heterostructures Composed of Silicon Nanosphere and Monolayer WS2