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We report the fabrication of perpendicular ferromagnetic electrodes fortunneling devices consist of van der Waals heterostructure. We found MgO/Co/Ptfilms on Hexagonal BN shows perpendicular magnetic anisotropy (PMA) with theeasy axis perpendicular to the substrate. Vacuum annealing enhances theperpendicular anisotropy. The easy axis along the perpendicular directionpersists up to room temperature with the Pt layer thickness ranges from 1.5 to5 nm. We employed the PMA electrodes to construct tunneling devices on grapheneand monolayer WSe2, where spin injection characteristics and field effecttransistor behavior were demonstrated without strong Schottky barrierformation.

Tunneling Devices with Perpendicular Magnetic Anisotropy Electrodes on Atomically Thin van der Waals Heterostructures