English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We present electrical and structural characterization of epitaxialLaTiO3/SrTiO3 quantum wells integrated directly on Si(100). The quantum wellsexhibit metallic transport described by Fermi-liquid behavior. Carriers arisefrom both charge transfer from the LaTiO3 to SrTiO3 and oxygen vacancies in thelatter. By reducing the thickness of the quantum wells, an enhancement incarrier-carrier scattering is observed, and insulating transport emerges.Consistent with a Mott-driven transition in bulk rare-earth titanates, theinsulating behavior is described by activated transport, and the onset ofinsulating transport occurs near 1 electron per Ti occupation within the SrTiO3well. We also discuss the role that structure and gradients in strain may playin enhancing the carrier density. The manipulation of metal-insulator behaviorin oxides grown directly on Si opens the pathway to harnessing stronglycorrelated phenomena in device technologies.

Atomic layer control of metal-insulator behavior in oxide quantum wells integrated directly on silicon