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The introduction of manganite buffer layers, La7/8Sr1/8MnO3 (LSMO) inparticular, at the metallic interface between SrTiO3 (STO) and another bandinsulator suppresses the carrier density of the interfacial two-dimensionalelectron gas (2DEG) and improves significantly the electron mobility. However,the mechanisms underlying the extreme mobility enhancement remain elusive.Herein, we used 18O isotope exchanged SrTi18O3 as substrates to create 2DEG atroom temperature with and without the LSMO buffer layer. By mapping the oxygenprofile across the interface between STO18 and disordered LaAlO3 oryttria-stabilized zirconia (YSZ), we provide unambiguous evidence that redoxreactions occur at oxide interfaces even grown at room temperature. Moreover,the manganite buffer layer not only suppresses the carrier density but alsostrongly suppresses the oxygen exchange dynamics of the STO substrate, whichlikely prevents the reduction of STO during the formation of the 2DEG. Theunderlying mechanism on the enhanced electron mobility at buffered oxideinterfaces is also discussed.

Scavenging of oxygen vacancies at modulation-doped oxide interfaces: Evidence from oxygen isotope tracing