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Artificial atomic systems in solids are becoming increasingly importantbuilding blocks in quantum information processing and scalable quantumnanophotonic networks. Yet, synthesis of color centers that act as singlephoton emitters which are suitable for on-chip applications is still beyondreach. Here, we report a number of plasma and thermal annealing methods for thefabrication of emitters in tape-exfoliated hexagonal boron nitride (hBN)crystals. A two-step process comprised of Ar plasma etching and subsequentannealing in Ar is highly robust, and yields a seven-fold increase in theconcentration of emitters in hBN. The initial plasma etching step generatesemitters that suffer from blinking and bleaching, whereas the two-step processyields emitters that are photostable at room temperature and have an emissionenergy distribution that is red-shifted relative to that of pristine hBN. Ananalysis of emitters fabricated by a range of plasma and annealing treatments,combined with a theoretical investigation of point defects in hBN indicatesthat single photon emitters characterized by a high degree of photostabilityand emission wavelengths greater than ~700 nm are associated with defectcomplexes that contain oxygen. This is further confirmed by generating theemitters by annealing hBN in an oxidative atmosphere. Our findings advancepresent understanding of the structure of quantum emitter in hBN and enhancethe nanofabrication toolkit that is needed to realize integrated quantumnanophotonics based on 2D materials.

Single Photon Emission from Plasma Treated 2D Hexagonal Boron Nitride