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We determine atomic and electronic structure, formation energy, stability andmagnetic properties of native point defects, such as Gallium (Ga) and Nitrogen(N) vacancies in bulk and at non-polar (10$\overline{1}$0) surface of wurtziteGallium Nitride (\textit w-GaN) using, first-principles calculations based onDensity Functional Theory (DFT). Under both Ga-rich and N-rich conditions,formation energy of N-vacancies is significantly lower than that ofGa-vacancies in bulk and at (10$\overline{1}$0) surface. Experimental evidenceof the presence of N-vacancies was noted from electron energy loss spectroscopymeasurements which further correlated with the high electrical conductivityobserved in GaN nanowall network. We find that the Fermi level pins at 0.35$\pm$0.02 eV below Ga derived surface state. Presence of atomic steps in thenanostructure due to formation of N-vacancies at the (10$\overline{1}$0)surface makes its electronic structure metallic. Clustering of N-vacancies andGa-Ga metallic bond formation near these vacancies, is seen to be anothersource of electrical conductivity of faceted GaN nanostructure that is observedexperimentally.

Vacancy defect in bulk and at (10$\overline{1}$0) surface of GaN: A combined first-principles theoretical and experimental analysis