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We show, theoretically, that the phase of the interlayer exchange coupling(IEC) undergoes a topological change of approximately $2\pi$ as the chemicalpotential of the ferromagnetic (FM) lead moves across a hybridization gap (HG).The effect is largely independent of the detailed parameters of the system, inparticular the width of the gap. The implication is that for a narrow gap, asmall perturbation in the chemical potential of the lead can give a signreversal of the exchange coupling. This offers the possibility of controllingmagnetization switching in spintronic devices such as MRAM, with little powerconsumption. Furthermore we believe that this effect has already beenindirectly observed, in existing measurements of the IEC as a function oftemperature and of doping of the leads.

Topological phase of the interlayer exchange coupling with application to magnetic switching