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Identification of complex defect has been a long-sought-after physics problemfor controlling the defect population and engineering the useful properties inwide bandgap oxide semiconductors. Here we report a systematic study of(GaZn-VZn)- acceptor complex defect via zinc self-diffusion in Ga-doped ZnOisotopic heterostructures, which were conceived and prepared with delicatelycontrolled growth conditions. The secondary ion mass spectrometry andtemperature-dependent Hall-effect measurements reveal that a high density ofcontrollable (GaZn-VZn)- is the predominant compensating defect in Ga-dopedZnO. The binding energy of this complex defect obtained from zincself-diffusion experiments (~0.78 eV) well matches the electrical activationenergy derived from the temperature-dependent electrical measurements (~0.82eV). The compensation ratios were quantitatively calculated by energeticanalysis and scattering process to further validate the compensation effect of(GaZn-VZn)- complex in Ga-doped ZnO. Meanwhile, its energy level structure wassuggested based on the photoluminescence spectra, and the lifetime was achievedfrom the time-resolved photoluminescence measurements. The electron transitionsbetween the (GaZn-VZn)- complex defect levels emit the light at ~650 nm with alifetime of 10-20 nanoseconds. These findings may greatly pave the way towardsnovel complex defects-derived optical applications.

GaZn-VZn acceptor complex defect in Ga-doped ZnO