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In the quest to develop spintronic logic, it was discovered thatmagnetoelectric switching results in lower energy and shorter switching timethan other mechanisms. Magnetoelectric (ME) field due to exchange bias at theinterface with a multi-ferroic (such as BiFeO3) is well suited for 180 degreeswitching of magnetization. The ME field is determined by the direction ofcanted magnetization in BiFeO3 which can point at an angle to the plane, towhich voltage is applied. Dependence of switching time and the threshold of MEfield on its angles was determined by micromagnetic simulations. Switchingoccurs by formation of a domain wall on the side of the nanomagnet on top ofBFO and its propagation to the rest of the magnet. For in-plane magnetization,switching occurs over a wide range of angles and at all magnitudes of ME fieldabove threshold. For out-of-plane magnetization failure occurs (with anexception of a narrow range of angles and magnitudes of ME field) due to thedomain wall reflecting from the opposite end of the nanomagnet.

Patterns and Thresholds of Magnetoelectric Switching in Spin Logic Devices